Evaluation of n- and pMOSFET channel materials for next-generation CMOS: Quantum transport and carrier scattering effects

Abstract

The continuous scaling of complementary metal-oxide-semiconductor (CMOS) technology has necessitated the exploration of advanced channel materials to overcome the limitations of traditional silicon (Si)-based devices. This study aims to evaluate the performance of four promising channel materials—silicon (Si), germanium (Ge), silicon-germanium (SiGe), and indium gallium arsenide (InGaAs)—for next-generation nMOSFET and pMOSFET applications. The primary objective was to investigate the interplay between quantum transport phenomena and carrier scattering effects in these materials and assess their impact on key performance metrics such as carrier mobility, drive current (ION), subthreshold swing (SS), and thermal stability. Materials were characterized using techniques like X-ray diffraction (XRD), atomic force microscopy (AFM), and secondary ion mass spectrometry (SIMS). Non-equilibrium Green’s Function (NEGF) simulations were performed alongside experimental analysis using Hall effect measurements, low-frequency noise spectroscopy, and temperature-dependent I-V characterization. Statistical tools such as ANOVA, Tukey post-hoc tests, and Principal Component Analysis (PCA) were employed for validation. The results demonstrated that InGaAs exhibited the highest electron mobility (8500 cm²/V·s), lowest carrier scattering rates, and superior drive current (1500 μA/μm), making it the most suitable material for nMOSFETs. Ge emerged as the optimal choice for pMOSFETs due to its exceptional hole mobility (1900 cm²/V·s) and moderate thermal stability. SiGe showed moderate improvements over pure Si but failed to match the performance of InGaAs and Ge. Statistical analysis confirmed significant differences across all performance metrics (p