article
Defects in epitaxial multilayers
Journal of Crystal Growth · 1974 · Vol. 27 · pp. 118–125
J. W. Matthews✉(IBM Research - Thomas J. Watson Research Center)A. E. Blakeslee(IBM Research - Thomas J. Watson Research Center)
Semiconductor Quantum Structures and DevicesSemiconductor materials and interfacesAdvanced Semiconductor Detectors and MaterialsDislocationEpitaxyMaterials scienceCondensed matter physicsPartial dislocationsTransmission electron microscopyCrystallographyBurgers vectorSlip (aerodynamics)Thin film
Citations
1,481
FWCI
0.00
field-weighted impact
References
27
Percentile
29%
vs. same field & year
Citations per year
Cited by
Calculation of critical layer thickness versus lattice mismatch for Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures
Applied Physics Letters · 1985 · 1,727 citations
Fundamentals of flexoelectricity in solids
Nanotechnology · 2013 · 697 citations
References
Defects in epitaxial multilayers
Journal of Crystal Growth · 1975 · 533 citations
Defects in epitaxial multilayers I. Misfit dislocations
Journal of Crystal Growth · 1974 · 3,086 citations
Citation Network
How this paper connects to the literature. Drag to explore, click any node to open that paper.