N-RADFET will able to replace P-RADFET

Abstract

This paper proposes the concept of quasi sensitivity and ultimate sensitivity, thereby reveals the reason for exclusive R&D of P-channel Radiation Field Effect Transistor (P-RADFET). The N-RADFET that was generally negated could replace P-RADFET to become RADFET mainstream. Under identical conditions, N-RADFET’s ultimate sensitivity exceeds that of P-RADFET by 52.8%. The comparison is calculated based on the basic constant from published P-RADFET data. Therefore, this result does not need to do any experiments to verify.