articleTop 10% cited
Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films
Journal of Crystal Growth · 2003 · Vol. 249(1-2) · pp. 251–261
Dennis M. Hausmann(Harvard University)Roy G. Gordon✉(Harvard University)
Semiconductor materials and devicesElectronic and Structural Properties of OxidesFerroelectric and Negative Capacitance DevicesCrystallinityAtomic layer depositionCrystalliteHafniumMaterials scienceZirconiumSurface roughnessNucleationTransmission electron microscopyChemical engineering
Citations
308
FWCI
11.30
field-weighted impact
References
19
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99%
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Cited by
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
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References
High-κ gate dielectrics: Current status and materials properties considerations
Journal of Applied Physics · 2001 · 5,826 citations
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