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Recent developments in magnetic tunnel junction MRAM

IEEE Transactions on Magnetics · 2000 · Vol. 36(5) · pp. 2752–2757

S. Tehrani✉(Motorola (United States))B. Engel(Physical Sciences (United States))J. M. Slaughter(Motorola (United States))E. Chen(Motorola (United States))M. DeHerrera(Physical Sciences (United States))M. Durlam(Motorola (United States))P. Naji(Motorola (United States))R. Whig(Motorola (United States))J. Janesky(Physical Sciences (United States))J. Calder(Motorola (United States))

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Abstract

We summarize our progress on Magnetoresistive Random Access Memory (MRAM) based on Magnetic Tunnel Junctions (MTJ). We have demonstrated MTJ material in the 1-1000 k/spl Omega/-/spl mu/m/sup 2/ range with MR values above 40%. The switching characteristics are mainly governed by the magnetic shape anisotropy that arises from the element boundaries. The switching repeatability, as well as hard axis selectability, are shown to be dependent on both shape and aspect ratio. MTJ memory elements were successfully integrated with 0.6 /spl mu/m CMOS technology, achieving read and program address access times of 14 ns in a 256/spl times/2 MRAM.

Magnetic properties of thin films Advanced Memory and Neural Computing Magnetic and transport properties of perovskites and related materialsMagnetoresistive random-access memoryTunnel magnetoresistanceMaterials scienceMagnetoresistanceCMOSRandom access memoryCondensed matter physicsMagnetic storageMagnetic anisotropyOptoelectronics

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