articleTop 10% cited
Modeling and simulation of insulated-gate field-effect transistor switching circuits
IEEE Journal of Solid-State Circuits · 1968 · Vol. 3(3) · pp. 285–289
Abstract
A new equivalent circuit for the insulated-gate field-effect transistor (IGFET) is described. This device model is particularly useful for computer-aided analysis of monolithic integrated IGFET switching circuits. The results of computer simulations using the new equivalent circuit are in close agreement with experimental observations. As an example of a practical application, simulation results are shown for an integrated circuit IGFET memory cell.
Silicon Carbide Semiconductor TechnologiesInduction Heating and Inverter TechnologyAdvanced DC-DC ConvertersTransistorElectronic circuitField-effect transistorEquivalent circuitIntegrated circuitDiscrete circuitElectronic engineeringElectrical engineeringComputer scienceEngineering
Citations
530
FWCI
6.78
field-weighted impact
References
8
Percentile
97%
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Citations per year
References
Iterative Methods for the Solution of Equations.
American Mathematical Monthly · 1967 · 2,191 citations
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