Charge pumping in MOS devices

Abstract

Gate pulses applied to MOS transistors were found to stimulate a net flow of charge into the substrate. Investigation of this effect revealed a charge-pumping phenomeonon in MOS gate-controlled-diode structures. A first-order theory is given, whereby the injected charge is separated into two components. One component involves coupling via fast surface states at the Si-SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> interface under the gate, while the other involves recombination of free inversion-layer charge into the substrate.