articleTop 1% cited
Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
Nature Materials · 2004 · Vol. 3(6) · pp. 404–409
Kenji Watanabe✉(National Institute for Materials Science)Takashi Taniguchi(National Institute for Materials Science)H. Kanda(National Institute for Materials Science)
GaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and propertiesLasing thresholdMaterials scienceOptoelectronicsUltravioletBand gapExcitonLaserCathodoluminescenceDirect and indirect band gapsExcitation
Citations
2,956
FWCI
16.16
field-weighted impact
References
39
Percentile
100%
vs. same field & year
Citations per year
Cited by
Graphene, hexagonal boron nitride, and their heterostructures: properties and applications
RSC Advances · 2017 · 710 citations
Nitroarene reduction: a trusted model reaction to test nanoparticle catalysts
Chemical Communications · 2015 · 738 citations
Synthesis of high-purity boron nitride single crystals under high pressure by using Ba–BN solvent
Journal of Crystal Growth · 2007 · 558 citations
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Nature Materials · 2004 · 2,069 citations
Substrate-induced band gap in graphene on hexagonal boron nitride:<i>Ab initio</i>density functional calculations
Physical Review B · 2007 · 1,501 citations
Hexagonal boron nitride is an indirect bandgap semiconductor
Nature Photonics · 2016 · 1,321 citations
Progress, Challenges, and Opportunities for 2D Material Based Photodetectors
Advanced Functional Materials · 2018 · 1,486 citations
Two dimensional hexagonal boron nitride (2D-hBN): synthesis, properties and applications
Journal of Materials Chemistry C · 2017 · 1,152 citations
References
Interband Optical Transitions in Extremely Anisotropic Semiconductors. I. Bound and Unbound Exciton Absorption
Journal of the Physical Society of Japan · 1966 · 517 citations
Optically pumped ultraviolet lasing from ZnO
Solid State Communications · 1996 · 533 citations
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Japanese Journal of Applied Physics · 1996 · 2,483 citations
Citation Network
How this paper connects to the literature. Drag to explore, click any node to open that paper.