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Basic principles of STT-MRAM cell operation in memory arrays

Journal of Physics D Applied Physics · 2013 · Vol. 46(7) · pp. 074001–074001

A. V. Khvalkovskiy✉(Samsung (United States))Dmytro Apalkov(Samsung (United States))Steven Watts(Samsung (United States))Roman V. Chepulskii(Samsung (United States))R. S. Beach(Samsung (United States))A. Ong(Samsung (United States))X. Tang(Samsung (United States))A. Driskill-Smith(Samsung (United States))W. H. Butler(University of Alabama)P. B. Visscher(University of Alabama)D. K. Lottis(Samsung (United States))E Chen(Samsung (United States))V. Nikitin(Samsung (United States))M. Krounbi(Samsung (United States))

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Abstract

For reliable operation, individual cells of an STT-MRAM memory array must meet specific requirements on their performance. In this work we review some of these requirements and discuss the fundamental physical principles of STT-MRAM operation, covering the range from device level to chip array performance, and methodology for its development.

Ferroelectric and Negative Capacitance Devices Semiconductor materials and devices Advanced Memory and Neural ComputingMagnetoresistive random-access memoryMaterials scienceOptoelectronicsComputer scienceEngineering physicsNanotechnologyComputer hardwarePhysicsRandom access memory

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