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Basic materials physics of transparent conducting oxides

Dalton Transactions · 2004 · pp. 2995–2995
Peter P. EdwardsAdrian PorchMartin O. JonesD. V. MorganR. M. Perks

Abstract

Materials displaying the remarkable combination of high electrical conductivity and optical transparency already from the basis of many important technological applications, including flat panel displays, solar energy capture and other opto-electronic devices. Here we present the basic materials physics of these important materials centred on the nature of the doping process to generate n-type conductivity in transparent conducting oxides, the associated transition to the metallic (conducting) state and the detailed properties of the degenerate itinerant electron gas. The aim is to fully understand the origins of the basic performance limits of known materials and to set the scene for new or improved materials which will breach those limits for new-generation transparent conducting materials, either oxides, or beyond oxides.

Semiconductor materials and devicesThin-Film Transistor TechnologiesElectronic and Structural Properties of OxidesTransparency (behavior)DopingMaterials scienceNanotechnologyConductivityTransparent conducting filmEngineering physicsElectrical conductorOptoelectronicsPhysics

Funding

  • University of Oxford
  • University of Nottingham
Citations
406
FWCI
3.71
field-weighted impact
References
17
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93%
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