articleTop 1% cited
Monte Carlo determination of electron transport properties in gallium arsenide
Journal of Physics and Chemistry of Solids · 1970 · Vol. 31(9) · pp. 1963–1990
W. Ronald Fawcett✉(Electronics and Radar Development Establishment)A. D. Boardman(Electronics and Radar Development Establishment)S. K. Swain(Electronics and Radar Development Establishment)
Semiconductor materials and devicesQuantum and electron transport phenomenaElectronic and Structural Properties of OxidesMonte Carlo methodGallium arsenideBoltzmann equationScatteringDistribution functionElectronPopulationElectric fieldPhysicsComputational physics
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853
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42
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Cited by
Semiconducting and other major properties of gallium arsenide
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Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport
IEEE Transactions on Electron Devices · 1991 · 584 citations
References
<i>Methods in Computational Physics</i>
Physics Today · 1964 · 2,206 citations
Band structure of indium antimonide
Journal of Physics and Chemistry of Solids · 1957 · 3,659 citations
Electron scattering in InSb
Journal of Physics and Chemistry of Solids · 1957 · 476 citations
Microwave oscillations of current in III–V semiconductors
Solid State Communications · 1963 · 682 citations
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