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Anisotropic magnetoresistance in ferromagnetic 3d alloys

IEEE Transactions on Magnetics · 1975 · Vol. 11(4) · pp. 1018–1038
T. R. McGuireRobert I. Potter

Abstract

The anisotropic magnetoresistance effect in 3d transition metals and alloys is reviewed. This effect, found in ferromagnets, depends on the orientation of the magnetization with respect to the electric current direction in the material. At room temperature, the anisotropic resistance in alloys of Ni-Fe and Ni-Co can be greater than 5%. The theoretical basis takes into account spin orbit coupling and d band splitting. Other properties such as permeability, magnetostriction, and Hall voltage have no simple relationship to magnetoresistance. Anisotropic magnetoresistance has an important use as a magnetic field detector for digital recording and magnetic bubbles. Such detectors because of their small size are fabricated using thin film technology. Film studies show that thickness, grain size, and deposition parameters play a significant role in determining the percentage change in magnetoresistance. In general, the change is smaller in films than bulk materials. Several tables and graphs that list bulk and film data are presented.

Copper Interconnects and ReliabilityMagnetic properties of thin filmsSemiconductor materials and devicesMagnetoresistanceCondensed matter physicsMaterials scienceMagnetostrictionFerromagnetismAnisotropyColossal magnetoresistanceMagnetic anisotropyMagnetic shape-memory alloyMagnetization
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References
Side-Jump Mechanism for the Hall Effect of Ferromagnets
Physical review. B, Solid state · 1970 · 1,317 citations
Thin Film Phenomena
Journal of The Electrochemical Society · 1970 · 2,011 citations
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