articleTop 10% cited
Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
Surface Science · 1971 · Vol. 28(1) · pp. 157–193
Semiconductor materials and interfacesSemiconductor materials and devicesSilicon and Solar Cell TechnologiesCapacitanceInterface (matter)SiliconBand gapMaterials scienceCondensed matter physicsElectronic band structureOptoelectronicsChemistryPhysics
Citations
523
FWCI
5.35
field-weighted impact
References
19
Percentile
97%
vs. same field & year
Citations per year
References
Surface states at steam-grown silicon-silicon dioxide interfaces
IEEE Transactions on Electron Devices · 1966 · 669 citations
Citation Network
How this paper connects to the literature. Drag to explore, click any node to open that paper.