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Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

Nano Letters · 2011 · Vol. 11(6) · pp. 2396–2399

Alexander S. Mayorov✉(University of Manchester)Roman V. Gorbachev(University of Manchester)Sergey V. Morozov(Institute of Microelectronics Technology and High Purity Materials)Liam Britnell(University of Manchester)Rashid Jalil(University of Manchester)Leonid A. Ponomarenko(University of Manchester)Peter Blake(University of Manchester)Kostya S. Novoselov(University of Manchester)Kenji Watanabe(National Institute for Materials Science)Takashi Taniguchi(National Institute for Materials Science)A. K. Geim(University of Manchester)

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Abstract

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport at a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

Graphene research and applications Quantum and electron transport phenomena Advanced Physical and Chemical Molecular InteractionsGrapheneHexagonal boron nitrideBallistic conductionBoron nitrideFabricationGraphene nanoribbonsMicrometerBilayer graphene