articleTop 1% cited
Lasing in direct-bandgap GeSn alloy grown on Si
Nature Photonics · 2015 · Vol. 9(2) · pp. 88–92
Stephan Wirths✉(Forschungszentrum Jülich)Richard Geiger(Paul Scherrer Institute)Nils von den Driesch(Forschungszentrum Jülich)Gregor Mußler(Forschungszentrum Jülich)T. Stoïca(Forschungszentrum Jülich)S. Mantl(Forschungszentrum Jülich)Z. Ikonić(University of Leeds)M. Luysberg(Ernst Ruska Centre)S. Chiussi(Universidade de Vigo)J. M. Hartmann(Institut polytechnique de Grenoble)H. Sigg(Paul Scherrer Institute)Jérôme Faist(ETH Zurich)Dan Buca(Forschungszentrum Jülich)Detlev Grützmacher(Forschungszentrum Jülich)
Photonic and Optical DevicesPhotonic Crystals and ApplicationsAdvanced Photonic Communication SystemsLasing thresholdMaterials scienceOptoelectronicsBand gapDirect and indirect band gapsSemiconductorWide-bandgap semiconductorLaser linewidthPhotoluminescenceLaser
Citations
1,218
FWCI
104.70
field-weighted impact
References
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100%
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Citations per year
References
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
Optics Express · 2007 · 631 citations
An electrically pumped germanium laser
Optics Express · 2012 · 758 citations
Mid-infrared photonics in silicon and germanium
Nature Photonics · 2010 · 1,432 citations
Electrically pumped hybrid AlGaInAs-silicon evanescent laser
Optics Express · 2006 · 1,213 citations
Ge-on-Si laser operating at room temperature
Optics Letters · 2010 · 874 citations
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