article Open AccessTop 1% cited
An electrically pumped germanium laser
Optics Express · 2012 · Vol. 20(10) · pp. 11316–11316
Rodolfo Camacho‐Aguilera✉(Massachusetts Institute of Technology)Yan Cai(Massachusetts Institute of Technology)Neil Patel(Massachusetts Institute of Technology)Jonathan T. Bessette(Massachusetts Institute of Technology)M. Romagnoli(Massachusetts Institute of Technology)Lionel C. Kimerling(Massachusetts Institute of Technology)Jürgen Michel(Massachusetts Institute of Technology)
Abstract
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x10<sup>19</sup>cm<sup>-3</sup> is achieved. A Germanium gain spectrum of nearly 200nm is observed.
Photonic and Optical DevicesSemiconductor Quantum Structures and DevicesAdvanced Fiber Laser TechnologiesGermaniumLasing thresholdMaterials scienceOptoelectronicsOpticsLaserSiliconDiodeSemiconductor laser theoryDoping
Funding
- National Science Foundation
- Naval Air Warfare Center, Aircraft Division
Citations
758
FWCI
78.30
field-weighted impact
References
14
Percentile
100%
vs. same field & year
Citations per year
Cited by
Lasing in direct-bandgap GeSn alloy grown on Si
Nature Photonics · 2015 · 1,218 citations
References
Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
Optics Express · 2007 · 631 citations
Ge-on-Si laser operating at room temperature
Optics Letters · 2010 · 874 citations
Citation Network
How this paper connects to the literature. Drag to explore, click any node to open that paper.