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40 Gbit/s silicon optical modulator for high-speed applications

Electronics Letters · 2007 · Vol. 43(22) · pp. 1196–1197

Ling Liao✉(Mission College)A. Liu(Mission College)Doron Rubin(Intel (Israel))Juthika Basak(Intel (United States))Yoel Chetrit(Intel (Israel))Hang Tuan Nguyen(Mission College)Rami Cohen(Intel (Israel))Nahum Izhaky(Intel (Israel))Mario Paniccia(Mission College)

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Abstract

A high-speed silicon optical modulator based on the free carrier plasma dispersion effect is presented. It is based on carrier depletion of a pn diode embedded inside a silicon-on-insulator waveguide. To achieve high-speed performance, a travelling-wave design is used to allow co-propagation of the electrical and optical signals along the length of the device. The resulting modulator has a 3 dB bandwidth of ∼30 GHz and can transmit data up to 40 Gbit/s.

Photonic and Optical Devices Advanced Photonic Communication Systems Optical Network TechnologiesGigabitSilicon photonicsElectro-optic modulatorMaterials scienceOptical modulatorDiodeSilicon on insulatorBandwidth (computing)SiliconOptoelectronics

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50-Gb/s Silicon Optical Modulator