articleTop 1% cited
50-Gb/s Silicon Optical Modulator
IEEE Photonics Technology Letters · 2011 · Vol. 24(4) · pp. 234–236
David J. Thomson✉(University of Surrey)Frédéric Y. Gardes(University of Surrey)Jean-Marc Fédéli(CEA Grenoble)Sanja Zlatanovic(University of California San Diego)Youfang Hu(University of Surrey)Bill Ping Piu Kuo(University of California San Diego)Evgeny Myslivets(University of California San Diego)Nikola Alić(University of California San Diego)Stojan Radic(University of California San Diego)Goran Z. Mashanovich(University of Surrey)Graham T. Reed(University of Surrey)
Abstract
Optical modulators formed in silicon are the keystone to many low cost optical applications. Increasing the data rate of the modulator benefits the efficiency of channel usage and decreases power consumption per bit of data. Silicon-based modulators which operate via carrier depletion have to the present been demonstrated at data rates up to 40 Gb/s; however, here we present for the first time optical modulation at 50 Gb/s with a 3.1-dB extinction ratio obtained from carrier depletion based phase shifter incorporated in a Mach-Zehnder interferometer. A corresponding optical insertion loss of approximately 7.4 dB is measured.
Photonic and Optical DevicesOptical Network TechnologiesAdvanced Photonic Communication SystemsExtinction ratioSilicon photonicsInsertion lossMaterials scienceInterferometrySiliconOptical modulation amplitudeModulation (music)Optical modulatorOptoelectronics
Funding
- Engineering and Physical Sciences Research Council
Citations
417
FWCI
39.36
field-weighted impact
References
22
Percentile
100%
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Citations per year
References
Silicon optical modulators
Nature Photonics · 2010 · 2,383 citations
40 Gbit/s silicon optical modulator for high-speed applications
Electronics Letters · 2007 · 399 citations
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