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Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach

Applied Physics Letters · 2001 · Vol. 78(4) · pp. 407–409
Yanlei KongDapeng YuB. ZhangWei FangS. Q. Feng

Abstract

ZnO nanowires were mass produced using a physical vapor deposition approach. The ZnO nanowire monocrystallites have an average diameter around 60 nm and length up to a few micrometers. The unidirectional growth of the ZnO nanowires was controlled by the conventional vapor-liquid-solid mechanism. Intensive UV light emission peaked around 3.27 eV was observed at room temperature, which was assigned to emission from free exciton under low excitation intensity. The observed room temperature UV emission was ascribed to the decrease in structure defects as compared to bulk ZnO materials, and in particularly to the size effect in the ZnO wires.

ZnO doping and propertiesGa2O3 and related materialsGaN-based semiconductor devices and materialsNanowireMaterials scienceChemical vapor depositionUltravioletExcitonPhysical vapor depositionDeposition (geology)Vapor–liquid–solid methodOptoelectronicsWide-bandgap semiconductor
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References
The Luminescence of ZnO under High One‐ and Two‐Quantum Excitation
physica status solidi (b) · 1975 · 598 citations
Optically pumped ultraviolet lasing from ZnO
Solid State Communications · 1996 · 533 citations
Optically pumped lasing of ZnO at room temperature
Applied Physics Letters · 1997 · 2,190 citations
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