article

Carrier mobilities in silicon empirically related to doping and field

Proceedings of the IEEE · 1967 · Vol. 55(12) · pp. 2192–2193

D.M. Caughey✉(Nortel (Canada))R.E. Thomas

Abstract

Equations are presented which fit the experimental dependence of carrier mobilities on doping density and field strength in silicon. The curve-fitting procedures are described.

Silicon and Solar Cell Technologies Advancements in Semiconductor Devices and Circuit Design Advanced Surface Polishing TechniquesMobilitiesDopingSiliconMaterials scienceField (mathematics)Engineering physicsOptoelectronicsPhysicsSociologyMathematics

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