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Growth defects in GaN films on sapphire: The probable origin of threading dislocations

Journal of materials research/Pratt's guide to venture capital sources · 1996 · Vol. 11(3) · pp. 580–592

X. J. Ning✉(Case Western Reserve University)F. R. Chien(Case Western Reserve University)P. Pirouz(Case Western Reserve University)Jun Yang(Omega Optics (United States))M. Asif Khan(Omega Optics (United States))

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GaN-based semiconductor devices and materials Metal and Thin Film Mechanics Acoustic Wave Resonator TechnologiesMaterials scienceSapphireBurgers vectorDislocationWurtzite crystal structureHeterojunctionEpitaxyCrystallographyCondensed matter physicsLayer (electronics)

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325

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18.56

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Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Japanese Journal of Applied Physics · 1997 · 926 citations

References

Theory of Dislocations

Medical Entomology and Zoology · 1968 · 9,670 citations

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Journal of Crystal Growth · 1989 · 687 citations

THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN

Applied Physics Letters · 1969 · 1,308 citations

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