Field-Effect Transistors Based on Single Semiconducting Oxide Nanobelts

Abstract

We have fabricated field-effect transistors (FETs) based on single SnO2 and ZnO nanobelts of thicknesses between 10 and 30 nm. Switching ratios as large as 6 orders of magnitude and conductivities as high as 15 (Ω cm)-1 are observed. Annealing SnO2 nanobelt FETs in an oxygen-deficient atmosphere produces a negative shift in gate threshold voltage, indicating doping by the generation of surface oxygen vacancies. This treatment provides an effective way of tuning the electrical performance of the nanobelt devices. The ability of SnO2 FETs to act as gas sensors is also demonstrated. SnO2 FETs with lengths of about 500 nm or less show an anomalous behavior where the conductance cannot be modulated by the gate. ZnO nanobelt FETs are sensitive to ultraviolet light. Both photogeneration of electron−hole pairs and doping by UV induced surface desorption contribute to the conductivity.