article

A modified forward <i>I</i>-<i>V</i> plot for Schottky diodes with high series resistance

Journal of Applied Physics · 1979 · Vol. 50(7) · pp. 5052–5053

H. Norde✉(Uppsala University)

Abstract

It is shown that by plotting the function F (V) =V/2−(kT/q) ln(I/AA**T2) a reliable value of the barrier height can be obtained even if there is a series resistance which would hamper the evaluation of the standard lnI-vs-V plot. A theoretical examination of F (V) is followed by experimental plots for some common Schottky-barrier diodes.

Semiconductor materials and interfaces Surface and Thin Film Phenomena Silicon Carbide Semiconductor TechnologiesEquivalent series resistanceSchottky diodeSeries (stratigraphy)DiodePlot (graphics)Schottky barrierMaterials scienceAnalytical Chemistry (journal)OptoelectronicsMathematics

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Extraction of Schottky diode parameters from forward current-voltage characteristics