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Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs

Materials Chemistry and Physics · 2000 · Vol. 65(3) · pp. 227–248
S. EzhilvalavanTseung‐Yuen Tseng
Ferroelectric and Piezoelectric MaterialsSemiconductor materials and devicesElectronic and Structural Properties of OxidesDramGigabitDynamic random-access memoryCapacitorMaterials scienceDielectricEngineering physicsOptoelectronicsThin filmElectronic engineering
Citations
288
FWCI
10.53
field-weighted impact
References
138
Percentile
99%
vs. same field & year
Citations per year
References
Dielectric relaxation in solids
Journal of Physics D Applied Physics · 1999 · 5,198 citations
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Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs · Scinovex