articleTop 1% cited
Some effects of oxygen impurities on AlN and GaN
Journal of Crystal Growth · 2002 · Vol. 246(3-4) · pp. 287–298
Glen A. Slack(Rensselaer Polytechnic Institute)L. J. Schowalter✉(Rensselaer Polytechnic Institute)Donald T. Morelli(Aptiv (United States))Jaime A. Freitas(United States Naval Research Laboratory)
GaN-based semiconductor devices and materialsAcoustic Wave Resonator TechnologiesPlasma Diagnostics and ApplicationsWurtzite crystal structureImpurityLuminescenceOxygenMaterials scienceAbsorption (acoustics)Crystal (programming language)NitridePhase (matter)Analytical Chemistry (journal)
Citations
406
FWCI
11.14
field-weighted impact
References
56
Percentile
99%
vs. same field & year
Citations per year
Cited by
Luminescence properties of defects in GaN
Journal of Applied Physics · 2005 · 1,900 citations
References
Nonmetallic crystals with high thermal conductivity
Journal of Physics and Chemistry of Solids · 1973 · 2,050 citations
Mechanism of Yellow Luminescence in GaN
Japanese Journal of Applied Physics · 1980 · 680 citations
Growth of high purity AlN crystals
Journal of Crystal Growth · 1976 · 449 citations
The intrinsic thermal conductivity of AIN
Journal of Physics and Chemistry of Solids · 1987 · 971 citations
THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN
Applied Physics Letters · 1969 · 1,308 citations
Citation Network
How this paper connects to the literature. Drag to explore, click any node to open that paper.