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Green luminescent center in undoped zinc oxide films deposited on silicon substrates

Applied Physics Letters · 2001 · Vol. 79(7) · pp. 943–945

Bixia Lin✉(University of Science and Technology of China)Zhuxi Fu(University of Science and Technology of China)Yunbo Jia(University of Science and Technology of China)

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Abstract

The photoluminescence (PL) spectra of the undoped ZnO films deposited on Si substrates by dc reactive sputtering have been studied. There are two emission peaks, centered at 3.18 eV (UV) and 2.38 eV (green). The variation of these peak intensities and that of the I–V properties of the ZnO/Si heterojunctions were investigated at different annealing temperatures and atmospheres. The defect levels in ZnO films were also calculated using the method of full-potential linear muffin-tin orbital. It is concluded that the green emission corresponds to the local level composed by oxide antisite defect OZn rather than oxygen vacancy VO, zinc vacancy VZn, interstitial zinc Zni, and interstitial oxygen Oi.

ZnO doping and properties Gas Sensing Nanomaterials and Sensors Ga2O3 and related materialsPhotoluminescenceZincMaterials scienceAnnealing (glass)SiliconVacancy defectSputteringLuminescenceHeterojunctionWide-bandgap semiconductor

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Defect emissions in ZnO nanostructures