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The structural and luminescence properties of porous silicon

Journal of Applied Physics · 1997 · Vol. 82(3) · pp. 909–965
A. G. CullisLeigh CanhamP. D. J. Calcott

Abstract

A large amount of work world-wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si. Much progress has been made following the demonstration in 1990 that highly porous material could emit very efficient visible photoluminescence at room temperature. Since that time, all features of the structural, optical and electronic properties of the material have been subjected to in-depth scrutiny. It is the purpose of the present review to survey the work which has been carried out and to detail the level of understanding which has been attained. The key importance of crystalline Si nanostructures in determining the behaviour of porous Si is highlighted. The fabrication of solid-state electroluminescent devices is a prominent goal of many studies and the impressive progress in this area is described.

Silicon Nanostructures and PhotoluminescenceSemiconductor materials and devicesNanowire Synthesis and ApplicationsElectroluminescencePhotoluminescenceMaterials sciencePorous siliconPorosityLuminescenceFabricationPorous mediumNanotechnologySilicon
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Porous silicon formation: A quantum wire effect
Applied Physics Letters · 1991 · 1,846 citations
X-Ray Diffraction
Medical Entomology and Zoology · 1968 · 5,686 citations
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