article
Van der Waals epitaxy for highly lattice-mismatched systems
Journal of Crystal Growth · 1999 · Vol. 201-202 · pp. 236–241
Atsushi Koma✉(The University of Tokyo)
Fullerene Chemistry and ApplicationsGraphene research and applicationsBoron and Carbon Nanomaterials Researchvan der Waals forceHeterojunctionEpitaxyDangling bondLattice (music)Chemical physicsMaterials scienceFullereneMolecular beam epitaxySubstrate (aquarium)
Funding
- Ministry of Education, Culture, Sports, Science and Technology
Citations
367
FWCI
1.66
field-weighted impact
References
22
Percentile
80%
vs. same field & year
Citations per year
Cited by
Band offsets and heterostructures of two-dimensional semiconductors
Applied Physics Letters · 2013 · 1,639 citations
Topological Insulator Materials
Journal of the Physical Society of Japan · 2013 · 1,652 citations
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Nanoscale · 2014 · 2,976 citations
References
Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system
Thin Solid Films · 1992 · 592 citations
Citation Network
How this paper connects to the literature. Drag to explore, click any node to open that paper.