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Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
Applied Physics Letters · 2004 · Vol. 84(6) · pp. 855–857
Tetsuo Fujii✉(University of California, Santa Barbara)Yan Gao(University of California, Santa Barbara)Rajat Sharma(University of California, Santa Barbara)Evelyn L. Hu(University of California, Santa Barbara)Steven P. DenBaars(University of California, Santa Barbara)Shuji Nakamura(University of California, Santa Barbara)
Abstract
Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency. By using the laser-lift-off technique followed by an anisotropic etching process to roughen the surface, an n-side-up GaN-based LED with a hexagonal “conelike” surface has been fabricated. The enhancement of the LED output power depends on the surface conditions. The output power of an optimally roughened surface LED shows a twofold to threefold increase compared to that of an LED before surface roughening.
GaN-based semiconductor devices and materialsPlasma Diagnostics and ApplicationsMetal and Thin Film MechanicsMaterials scienceLight-emitting diodeOptoelectronicsDiodeWide-bandgap semiconductorSurface roughnessEtching (microfabrication)LaserSurface finishOptics
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