articleTop 10% cited
Structural Studies of Tin-Doped Indium Oxide (ITO) and In4Sn3O12
Journal of Solid State Chemistry · 1998 · Vol. 135(1) · pp. 140–148
Nicolas Nadaud✉(Centre National de la Recherche Scientifique)Nicolas Lequeux(Centre National de la Recherche Scientifique)M. Nanot(Centre National de la Recherche Scientifique)J. Jové(Institut Curie)Thierry Roisnel(CEA Paris-Saclay)
ZnO doping and propertiesGas Sensing Nanomaterials and SensorsTransition Metal Oxide NanomaterialsTinDopingIndiumMaterials scienceNeutron diffractionIndium tin oxideElectrical resistivity and conductivityInorganic chemistryAnalytical Chemistry (journal)Chemistry
Citations
334
FWCI
4.18
field-weighted impact
References
26
Percentile
94%
vs. same field & year
Citations per year
References
Electrical properties and defect model of tin-doped indium oxide layers
Applied Physics A · 1982 · 617 citations
Citation Network
How this paper connects to the literature. Drag to explore, click any node to open that paper.