Magneto-transport properties of diluted magnetic semiconductors synthesized via chemical routes

Abstract

Diluted Magnetic Semiconductors (DMS) have attracted significant attention due to their potential applications in spintronics, where both charge and spin of electrons are utilized for device functionality. In this study, we investigate the magneto-transport properties of DMS synthesized through cost-effective chemical routes, which offer controlled doping, homogeneous distribution of magnetic ions, and scalability. Structural characterization confirms successful incorporation of transition metal dopants into the semiconductor host lattice without forming secondary phases. Electrical transport measurements reveal a strong correlation between carrier concentration, magnetic ion distribution, and conduction mechanism. Furthermore, magnetoresistance and Hall effect studies demonstrate the interplay between localized magnetic moments and itinerant charge carriers, indicating tunable ferromagnetic interactions mediated by carriers. The results suggest that chemical synthesis methods can produce high-quality DMS materials with promising magneto-transport behavior, making them suitable for next-generation spintronic devices.