article Open Access
On increasing of integration rate of elements in a MOSFET-filter
International Journal of Electronics and Microcircuits · 2023 · Vol. 3(1) · pp. 25–35
E.L. Pankratov✉(Saratov State University)
Abstract
In this paper we introduce an approach to increase integration rate of elements in a MOSFET-filter. The approach based on decreasing of dimension of elements of the invertor (diodes and bipolar transistors) due to manufacturing of these elements by diffusion or ion implantation in a heterostructure with specific configuration and optimization of annealing of dopant and radiation defects.
Engineering Technology and MethodologiesInduction Heating and Inverter TechnologyAdvanced Research in Systems and Signal ProcessingMOSFETDopantMaterials scienceOptoelectronicsDiodeHeterojunctionTransistorBipolar junction transistorAnnealing (glass)Electronic engineering
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