article Open Access
Changing of properties of epitaxial layers by choosing of temperature field during growth
International Journal of Physics and Mathematics · 2019 · Vol. 1(2) · pp. 29–33
Abstract
In this paper, we analyze the influence of the temperature of growth of epitaxial layers during their growth. Conditions are formulated under which the homogeneity of the properties of the epitaxial layers increases. An analytical approach for the analysis of mass and heat transfer is proposed, allowing at the same time to take into account changes in the parameters of processes both in space and in time, as well as nonlinearity of these processes.
Semiconductor Lasers and Optical DevicesEngineering Technology and MethodologiesAdvanced Theoretical and Applied Studies in Material Sciences and GeometryEpitaxyHomogeneity (statistics)Nonlinear systemMass transferMaterials scienceField (mathematics)ThermodynamicsMechanicsMathematicsLayer (electronics)
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