Spectra of the coefficient of defect absorption and the energy position of defects in amorphous hydrogenated silicon

Abstract

In the present work, the influence of light on defects of pseudo-doped amorphous hydrogenated silicon is theoretically investigated using the Davis-Mott approximation using the Kubo-Greenwood formula. It is showing that the shape of the spectra of the defective absorption coefficient is determining by the distribution of the density of states in the allowed zones. It was determined that the defect absorption spectra have maxima, where the maxima of the distribution of the energy position of defective states are located. It is shown that from the experimental data obtained for the defect absorption spectra one can determine the energy position of the defects.