articleTop 10% cited
Hall mobility in tin iodide perovskite CH3NH3SnI3: Evidence for a doped semiconductor
Journal of Solid State Chemistry · 2013 · Vol. 205 · pp. 39–43
Yukari Takahashi(Japan Science and Technology Agency)Hiroyuki Hasegawa(Japan Science and Technology Agency)Yukihiro Takahashi(Japan Science and Technology Agency)Tamotsu Inabe✉(Hokkaido University)
Perovskite Materials and ApplicationsElectronic and Structural Properties of OxidesSolid-state spectroscopy and crystallographyDopingSemiconductorElectron mobilityPerovskite (structure)Hall effectElectrical resistivity and conductivityCondensed matter physicsValence (chemistry)Materials scienceElectron hole
Funding
- Ministry of Education, Culture, Sports, Science and Technology
- Japan Society for the Promotion of Science
Citations
337
FWCI
11.06
field-weighted impact
References
16
Percentile
99%
vs. same field & year
Citations per year
Cited by
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Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells
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References
Generalized Gradient Approximation Made Simple
Physical Review Letters · 1996 · 205,888 citations
Transport, Optical, and Magnetic Properties of the Conducting Halide Perovskite CH3NH3SnI3
Journal of Solid State Chemistry · 1995 · 343 citations
Charge-transport in tin-iodide perovskite CH3NH3SnI3: origin of high conductivity
Dalton Transactions · 2011 · 412 citations
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