articleTop 10% cited
Construction of GaN/Ga<sub>2</sub>O<sub>3</sub> p–n junction for an extremely high responsivity self-powered UV photodetector
Journal of Materials Chemistry C · 2017 · Vol. 5(40) · pp. 10562–10570
Peigang Li(Zhejiang Sci-Tech University)Haoze Shi(Zhejiang Sci-Tech University)Kai Chen(Zhejiang Sci-Tech University)Daoyou Guo✉(Zhejiang Sci-Tech University)Wei Cui(Beijing University of Posts and Telecommunications)Yusong Zhi(Beijing University of Posts and Telecommunications)Shunli Wang(Zhejiang Sci-Tech University)Zhenping Wu(Beijing University of Posts and Telecommunications)Zhengwei Chen(Beijing University of Posts and Telecommunications)Weihua Tang✉(Beijing University of Posts and Telecommunications)
Abstract
A self-powered ultraviolet photodetector with an extremely high responsivity (54.43 mA W<sup>−1</sup>) was fabricated by constructing p–n junction of GaN/Ga<sub>2</sub>O<sub>3</sub> films.
Ga2O3 and related materialsZnO doping and propertiesPerovskite Materials and ApplicationsResponsivityPhotodetectorMaterials scienceUltravioletOptoelectronicsp–n junctionSemiconductor
Funding
- National Natural Science Foundation of China
Citations
351
FWCI
8.04
field-weighted impact
References
47
Percentile
98%
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Citations per year
Cited by
Self-powered diamond/β-Ga<sub>2</sub>O<sub>3</sub> photodetectors for solar-blind imaging
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References
Ga<sub>2</sub>O<sub>3</sub> Thin Film Growth on c-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors
Japanese Journal of Applied Physics · 2007 · 554 citations
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