article Open AccessTop 1% cited
n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation
Solar Energy Materials and Solar Cells · 2017 · Vol. 173 · pp. 96–105
Armin Richter✉(Fraunhofer Institute for Solar Energy Systems)Jan Benick(Fraunhofer Institute for Solar Energy Systems)Frank Feldmann(Fraunhofer Institute for Solar Energy Systems)Andreas Fell(Fraunhofer Institute for Solar Energy Systems)Martin Hermle(Fraunhofer Institute for Solar Energy Systems)Stefan W. Glunz(University of Freiburg)
Silicon and Solar Cell TechnologiesSemiconductor materials and interfacesThin-Film Transistor TechnologiesWaferElectrical resistivity and conductivityCommon emitterMaterials scienceSolar cellOptoelectronicsDopingWork functionSiliconEnergy conversion efficiency
Funding
- U.S. Department of Energy
- Bundesministerium für Wirtschaft und Energie
Citations
604
FWCI
38.75
field-weighted impact
References
63
Percentile
100%
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Citations per year
Cited by
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References
Contactless determination of current–voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
Applied Physics Letters · 1996 · 1,580 citations
Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
Solar Energy Materials and Solar Cells · 2013 · 722 citations
Iron and its complexes in silicon
Applied Physics A · 1999 · 534 citations
A review and comparison of different methods to determine the series resistance of solar cells
Solar Energy Materials and Solar Cells · 2007 · 476 citations
Statistics of the Recombinations of Holes and Electrons
Physical Review · 1952 · 6,327 citations
Electron-Hole Recombination in Germanium
Physical Review · 1952 · 2,664 citations
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