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Subbandgap laser-induced single event effects: carrier generation via two-photon absorption

IEEE Transactions on Nuclear Science · 2002 · Vol. 49(6) · pp. 3002–3008
Dale McMorrowWilliam T. LotshawJoseph S. MelingerS. BüchnerR.L. Pease

Abstract

Carrier generation based on subbandgap two-photon absorption is demonstrated and shown to be a viable alternative to the conventional single-photon excitation approach in laser-induced single event effects. The two-photon approach exhibits characteristics distinct from those of single-photon excitation, and may be advantageous for a range of single-event effect investigations. The charge track produced by two-photon absorption more closely resembles that of heavy-ion irradiation and, because the photon energy is subbandgap, backside injection through bulk silicon wafers is straightforward and three-dimensional mapping is possible.

Integrated Circuits and Semiconductor Failure AnalysisAdvanced Memory and Neural ComputingRadiation Effects in ElectronicsAbsorption (acoustics)PhotonLaserTwo-photon absorptionExcitationOptoelectronicsWaferMaterials scienceAtomic physicsPhoton energy
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