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A 10-bit 100-MS/s Reference-Free SAR ADC in 90 nm CMOS
IEEE Journal of Solid-State Circuits · 2010 · Vol. 45(6) · pp. 1111–1121
Yan Zhu✉(University of Macau)Chi‐Hang Chan(University of Macau)U-Fat Chio(University of Macau)Sai‐Weng Sin(University of Macau)U Seng‐Pan(University of Macau)Rui P. Martins(University of Macau)Franco Maloberti(University of Pavia)
Abstract
A 1.2 V 10-bit 100 MS/s Successive Approximation (SA) ADC is presented. The scheme achieves high-speed and low-power operation thanks to the reference-free technique that avoids the static power dissipation of an on-chip reference generator. Moreover, the use of a common-mode based charge recovery switching method reduces the switching energy and improves the conversion linearity. A variable self-timed loop optimizes the reset time of the preamplifier to improve the conversion speed. Measurement results on a 90 nm CMOS prototype operated at 1.2 V supply show 3 mW total power consumption with a peak SNDR of 56.6 dB and a FOM of 77 fJ/conv-step.
Analog and Mixed-Signal Circuit DesignCCD and CMOS Imaging SensorsLow-power high-performance VLSI designCMOSSuccessive approximation ADCDissipationLinearityPreamplifierFlash ADCVoltage referencePower (physics)Reset (finance)Chip
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References
A 12-bit 75-MS/s pipelined ADC using open-loop residue amplification
IEEE Journal of Solid-State Circuits · 2003 · 519 citations
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