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Amorphous-silicon field-effect device and possible application
Electronics Letters · 1979 · Vol. 15(6) · pp. 179–181
P. G. Le Comber✉(University of Dundee)W. E. Spear(University of Dundee)A. Ghaith(University of Dundee)
Abstract
The characteristics of an insulated-gate field-effect transistor made from amorphous silicon (a-Si) deposited in a glow discharge are discussed. It is suggested that the a-Si device could be applied with advantage in an addressable matrix of a liquid-crystal display panel.
Thin-Film Transistor TechnologiesSilicon Nanostructures and PhotoluminescenceZnO doping and propertiesMaterials scienceSiliconAmorphous siliconOptoelectronicsAmorphous solidField-effect transistorActive matrixLiquid-crystal displayField effectTransistor
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The physics of amorphous-silicon thin-film transistors
IEEE Transactions on Electron Devices · 1989 · 469 citations
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