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Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization

IEEE Journal of Quantum Electronics · 1991 · Vol. 27(6) · pp. 1332–1346
J. L. JewellJ. P. HarbisonAxel SchererYa‐Ze LeeL. T. Florez

Abstract

The authors have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5 mu m to>50 mu m. Design issues, molecular beam epitaxial growth, fabrication, and lasing characteristics are discussed. The topics considered in fabrication of VCSELs are microlaser geometries; ion implementation and masks; ion beam etching packaging and arrays, and ultrasmall devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Semiconductor Lasers and Optical DevicesPhotonic and Optical DevicesMolecular Junctions and NanostructuresFabricationLasing thresholdMaterials scienceLaserOptoelectronicsEtching (microfabrication)Vertical-cavity surface-emitting laserCharacterization (materials science)Molecular beam epitaxyOptics
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References
Surface emitting semiconductor lasers
IEEE Journal of Quantum Electronics · 1988 · 647 citations
Dynamics of film growth of GaAs by MBE from Rheed observations
Applied Physics A · 1983 · 956 citations
GaInAsP/InP Surface Emitting Injection Lasers
Japanese Journal of Applied Physics · 1979 · 539 citations
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