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Destructive single-event effects in semiconductor devices and ICs

IEEE Transactions on Nuclear Science · 2003 · Vol. 50(3) · pp. 603–621
F.W. Sexton

Abstract

Developments in the field of destructive single-event effects over the last 40 years are reviewed. Single-event latchup, single-event burnout, single-event gate rupture, and single-event snap-back are discussed beginning with the first observation of each effect, its phenomenology, and the development of present day understanding of the mechanisms involved.

Radiation Effects in ElectronicsIntegrated Circuits and Semiconductor Failure AnalysisVLSI and Analog Circuit TestingEvent (particle physics)Semiconductor deviceSingle event upsetPhenomenology (philosophy)EngineeringEngineering physicsElectrical engineeringElectronic engineeringReliability engineeringPhysics
Citations
264
FWCI
4.24
field-weighted impact
References
94
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94%
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Citations per year
Cited by
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References
Electrons and holes in semiconductors
Journal of the Franklin Institute · 1951 · 1,180 citations
Satellite Anomalies from Galactic Cosmic Rays
IEEE Transactions on Nuclear Science · 1975 · 404 citations
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