article Open AccessTop 1% cited
Demonstration of a silicon Raman laser
Optics Express · 2004 · Vol. 12(21) · pp. 5269–5269
Ozdal Boyraz✉(University of California, Los Angeles)Bahram Jalali(University of California, Los Angeles)
Abstract
We report the demonstration of the first silicon Raman laser. Experimentally, pulsed Raman laser emission at 1675 nm with 25 MHz repetition rate is demonstrated using a silicon waveguide as the gain medium. The laser has a clear threshold at 9 W peak pump pulse power and a slope efficiency of 8.5%.
Photonic and Optical DevicesSemiconductor Lasers and Optical DevicesLaser Material Processing TechniquesMaterials scienceOpticsLaserRaman spectroscopySiliconRaman amplificationRaman laserOptoelectronicsLaser power scalingRaman scattering
Funding
- Defense Advanced Research Projects Agency
Citations
773
FWCI
83.90
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