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Single-event effects in avionics

IEEE Transactions on Nuclear Science · 1996 · Vol. 43(2) · pp. 461–474
E. Normand

Abstract

The occurrence of single-event upset (SEU) in aircraft electronics has evolved from a series of interesting anecdotal incidents to accepted fact. A study completed in 1992 demonstrated that SEUs are real, that the measured in-flight rates correlate with the atmospheric neutron flux, and that the rates can be calculated using laboratory SEU data. Once avionics SEU was shown to be an actual effect, it had to be dealt with in avionics designs. The major concern is in random access memories (RAMs), both static (SRAMs) and dynamic (DRAMs), because these microelectronic devices contain the largest number of bits, but other parts, such as microprocessors, are also potentially susceptible to upset. In addition, other single-event effects (SEEs), specifically latch-up and burnout, can also be induced by atmospheric neutrons.

Radiation Effects in ElectronicsReliability and Maintenance OptimizationRisk and Safety AnalysisAvionicsSingle event upsetUpsetMicroelectronicsEvent (particle physics)EmulationDramElectronicsNeutronEngineering
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Cited by
Basic mechanisms and modeling of single-event upset in digital microelectronics
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References
Rate prediction for single event effects-a critique
IEEE Transactions on Nuclear Science · 1992 · 277 citations
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