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High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams

IEEE Photonics Technology Letters · 1997 · Vol. 9(8) · pp. 1063–1065

M. Kuznetsov✉(RTX (United States))F. Hakimi(MIT Lincoln Laboratory)Robert A. SpragueA. Mooradian

Abstract

We report demonstration of a new high-power semiconductor laser technology, the optically pumped semiconductor (OPS) vertical-external-cavity surface-emitting laser (VECSEL). Using diode laser pump, an OPS-VECSEL laser with a strain-compensated InGaAs-GaAsP-GaAs multiquantum-well (MQW) structure operated continuous-wave (CW) near /spl lambda//spl sim/1004 nm with record output power of 0.69 W in a TEM/sub 11/ mode, 0.52 W in a TEM/sub 00/ mode, and 0.37 W coupled to a single-mode fiber. It is feasible to produce greater than 1 W of power in a diffraction-limited circular beam from an efficient, compact, manufacturable and reliable OPS-VECSEL laser.

Semiconductor Lasers and Optical Devices Photonic and Optical Devices Semiconductor Quantum Structures and DevicesMaterials scienceLaserSemiconductor laser theoryOptoelectronicsOpticsVertical-cavity surface-emitting laserDiodeSemiconductorLaser diodePhysics

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High-power (&gt;0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams

Abstract

High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams