articleTop 1% cited
GaAs MQW modulators integrated with silicon CMOS
IEEE Photonics Technology Letters · 1995 · Vol. 7(4) · pp. 360–362
K.W. Goossen✉(Nokia (United States))James Alfred Walker(AT&T (United States))L.A. D'AsaroS.P. Hui(AT&T (United States))B. Tseng(AT&T (United States))R. E. Leibenguth(AT&T (United States))D. Kossives(AT&T (United States))D. D. Bacon(AT&T (United States))D. Dahringer(AT&T (United States))L. M. F. Chirovsky(AT&T (United States))Anthony L. Lentine(AT&T (United States))David A. B. Miller(AT&T (United States))
Abstract
We demonstrate integration of GaAs-AlGaAs multiple quantum well modulators to silicon CMOS circuitry via flip-chip solder-bonding followed by substrate removal. We obtain 95% device yield for 32/spl times/32 arrays of devices with 15 micron solder pads. We show operation of a simple circuit composed of a modulator and a CMOS transistor.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Semiconductor Quantum Structures and DevicesSemiconductor Lasers and Optical DevicesPhotonic and Optical DevicesCMOSOptoelectronicsSiliconSubstrate (aquarium)TransistorMaterials scienceIntegrated circuitChipGallium arsenideElectrical engineering
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