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1/f noise sources

IEEE Transactions on Electron Devices · 1994 · Vol. 41(11) · pp. 1926–1935

F.N. Hooge✉(Eindhoven University of Technology)

Abstract

This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an /spl alpha/ value with a magnitude in the order of 10/sup -4/. Damaging the crystal has a strong influence on /spl alpha/, /spl alpha/ may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The /spl alpha/ values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

Advancements in Semiconductor Devices and Circuit Design Analog and Mixed-Signal Circuit Design Low-power high-performance VLSI designNoise (video)HomogeneousValue (mathematics)PhysicsStatistical physicsComputer scienceMathematicsStatisticsArtificial intelligence

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