review Open AccessTop 1% cited
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Nature Nanotechnology · 2012 · Vol. 7(11) · pp. 699–712
Qing Hua Wang✉(Massachusetts Institute of Technology)Kourosh Kalantar‐Zadeh(RMIT University)András Kis(École Polytechnique Fédérale de Lausanne)Jonathan N. Coleman(Trinity College Dublin)Michael S. Strano(Massachusetts Institute of Technology)
2D Materials and ApplicationsGraphene research and applicationsGa2O3 and related materialsNanoelectronicsMaterials scienceGrapheneNanotechnologyElectronicsOptoelectronicsPhotodetectorFabricationElectroluminescenceExfoliation joint
MeSH terms
ElectronicsEquipment DesignModels, MolecularSemiconductorsChalcogensTransition ElementsOptics and Photonics
Citations
15,846
FWCI
289.95
field-weighted impact
References
175
Percentile
100%
vs. same field & year
Citations per year
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References
Phonons in single-layer and few-layer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>and WS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
Physical Review B · 2011 · 1,392 citations
Phonon-limited mobility in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type single-layer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>from first principles
Physical Review B · 2012 · 1,246 citations
Single-Layer MoS<sub>2</sub>Phototransistors
ACS Nano · 2011 · 3,443 citations
The growth and morphology of epitaxial multilayer graphene
Journal of Physics Condensed Matter · 2008 · 852 citations
Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
Physical Review B · 2011 · 1,628 citations
Fabrication of Single‐ and Multilayer MoS<sub>2</sub> Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature
Small · 2011 · 1,518 citations
Integrated Circuits Based on Bilayer MoS<sub>2</sub> Transistors
Nano Letters · 2012 · 1,696 citations
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
Journal of Applied Physics · 1994 · 2,696 citations
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