Step and flash imprint lithography: a new approach to high-resolution patterning

Abstract

An alternative approach to lithography is being developed based on a dual-layer imprint scheme. This process has the potential to become a high-throughput means of producing high aspect ratio, high-resolution patterns without projection optics. In this process, a template is created on a standard mask blank by using the patterned chromium as an etch mask to produce high-resolution relief images in the quartz. The etched template and a substrate that has been coated with an organic planarization layer are brought into close proximity. A low-viscosity, photopolymerizable formulation containing organosilicon precursors is introduced into the gap between the two surfaces. The template is then brought into contact with the substrate. The solution that is trapped in the relief structures of the template is photopolymerized by exposure through the backside of the quartz template. The template is separated from the substrate, leaving a UV-curved replica of the relief structure on the planarization layer. Features smaller than 60 nm in size have been reliably produced using this imprinting process. The resolution silicon polymer images are transferred through the planarization layer by anisotropic oxygen reactive ion etching. This paper provides a progress report on our efforts to evaluate the potential of this process.