articleTop 10% cited

A new empirical nonlinear model for HEMT and MESFET devices

IEEE Transactions on Microwave Theory and Techniques · 1992 · Vol. 40(12) · pp. 2258–2266

I. Angelov✉(Chalmers University of Technology)Herbert Zirath(Chalmers University of Technology)N. Rosman(Chalmers University of Technology)

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Abstract

A large-signal model for HEMTs and MESFETs, capable of modeling the current-voltage characteristic and its derivatives, including the characteristic transconductance peak, gate-source and gate-drain capacitances, is proposed. Model parameter extraction is straightforward and is demonstrated for different submicron gate-length HEMT devices including different delta -doped pseudomorphic HEMTs on GaAs and lattice matched to InP, and a commercially available MESFET. Measured and modeled DC and S-parameters are compared and found to coincide well.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>

GaN-based semiconductor devices and materials Radio Frequency Integrated Circuit Design Advancements in Semiconductor Devices and Circuit DesignMESFETHigh-electron-mobility transistorTransconductanceGallium arsenideOptoelectronicsNonlinear systemEquivalent circuitCapacitanceMaterials scienceVoltage

Funding

Chalmers Tekniska Högskola

Citations

545

FWCI

2.61

field-weighted impact

References

Percentile

90%

vs. same field & year

Citations per year

Cited by

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

IEEE Transactions on Microwave Theory and Techniques · 2012 · 965 citations

References

GaAs FET device and circuit simulation in SPICE

IEEE Transactions on Electron Devices · 1987 · 516 citations

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